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Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors
We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793544/ https://www.ncbi.nlm.nih.gov/pubmed/29283408 http://dx.doi.org/10.3390/ma11010046 |
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author | Zhang, Xue Lee, Hyeonju Kim, Jungwon Kim, Eui-Jik Park, Jaehoon |
author_facet | Zhang, Xue Lee, Hyeonju Kim, Jungwon Kim, Eui-Jik Park, Jaehoon |
author_sort | Zhang, Xue |
collection | PubMed |
description | We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm(2)/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. |
format | Online Article Text |
id | pubmed-5793544 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-57935442018-02-07 Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors Zhang, Xue Lee, Hyeonju Kim, Jungwon Kim, Eui-Jik Park, Jaehoon Materials (Basel) Article We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm(2)/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. MDPI 2017-12-28 /pmc/articles/PMC5793544/ /pubmed/29283408 http://dx.doi.org/10.3390/ma11010046 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Zhang, Xue Lee, Hyeonju Kim, Jungwon Kim, Eui-Jik Park, Jaehoon Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors |
title | Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors |
title_full | Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors |
title_fullStr | Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors |
title_full_unstemmed | Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors |
title_short | Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors |
title_sort | solution-processed gallium–tin-based oxide semiconductors for thin-film transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793544/ https://www.ncbi.nlm.nih.gov/pubmed/29283408 http://dx.doi.org/10.3390/ma11010046 |
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