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Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors
We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide...
Autores principales: | Zhang, Xue, Lee, Hyeonju, Kim, Jungwon, Kim, Eui-Jik, Park, Jaehoon |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793544/ https://www.ncbi.nlm.nih.gov/pubmed/29283408 http://dx.doi.org/10.3390/ma11010046 |
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