Electron irradiation induced amorphous SiO(2) formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces

Al(2)O(3) (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10(−9) mbar) and formation of amorphous SiO(2) around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardmen...

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Detalles Bibliográficos
Autores principales: Gurbán, S., Petrik, P., Serényi, M., Sulyok, A, Menyhárd, M., Baradács, E., Parditka, B., Cserháti, C., Langer, G. A., Erdélyi, Z.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794778/
https://www.ncbi.nlm.nih.gov/pubmed/29391562
http://dx.doi.org/10.1038/s41598-018-20537-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794778/
https://www.ncbi.nlm.nih.gov/pubmed/29391562
http://dx.doi.org/10.1038/s41598-018-20537-4

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