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Electron irradiation induced amorphous SiO(2) formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
Al(2)O(3) (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10(−9) mbar) and formation of amorphous SiO(2) around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardmen...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794778/ https://www.ncbi.nlm.nih.gov/pubmed/29391562 http://dx.doi.org/10.1038/s41598-018-20537-4 |