Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films

The discovery of resistance switching memristors marks a paradigm shift in the search for alternative non-volatile memory components in the semiconductor industry. Normally a dielectric in these bistable memory cells changes its resistance with an applied electric field or current, albeit retaining...

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Detalles Bibliográficos
Autores principales: Barnes, Benjamin Kerr, Das, Kausik S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794968/
https://www.ncbi.nlm.nih.gov/pubmed/29391500
http://dx.doi.org/10.1038/s41598-018-20598-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794968/
https://www.ncbi.nlm.nih.gov/pubmed/29391500
http://dx.doi.org/10.1038/s41598-018-20598-5

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