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Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films
The discovery of resistance switching memristors marks a paradigm shift in the search for alternative non-volatile memory components in the semiconductor industry. Normally a dielectric in these bistable memory cells changes its resistance with an applied electric field or current, albeit retaining...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794968/ https://www.ncbi.nlm.nih.gov/pubmed/29391500 http://dx.doi.org/10.1038/s41598-018-20598-5 |