Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been...

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Detalles Bibliográficos
Autores principales: Stefanov, Konstantin D., Clarke, Andrew S., Ivory, James, Holland, Andrew D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5795795/
https://www.ncbi.nlm.nih.gov/pubmed/29301379
http://dx.doi.org/10.3390/s18010118

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5795795/
https://www.ncbi.nlm.nih.gov/pubmed/29301379
http://dx.doi.org/10.3390/s18010118

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