Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection

We developed a Fabry–Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout...

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Detalles Bibliográficos
Autores principales: Maruyama, Satoshi, Hizawa, Takeshi, Takahashi, Kazuhiro, Sawada, Kazuaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5796276/
https://www.ncbi.nlm.nih.gov/pubmed/29304011
http://dx.doi.org/10.3390/s18010138

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5796276/
https://www.ncbi.nlm.nih.gov/pubmed/29304011
http://dx.doi.org/10.3390/s18010138

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