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Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection

We developed a Fabry–Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout...

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Detalles Bibliográficos
Autores principales:	Maruyama, Satoshi, Hizawa, Takeshi, Takahashi, Kazuhiro, Sawada, Kazuaki
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5796276/ https://www.ncbi.nlm.nih.gov/pubmed/29304011 http://dx.doi.org/10.3390/s18010138

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