Cargando…
Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film
In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO) thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60–70 ppb also showed...
Autores principales: | Wu, Chiu-Hsien, Jiang, Guo-Jhen, Chang, Kai-Wei, Deng, Zu-Yin, Li, Yu-Ning, Chen, Kuen-Lin, Jeng, Chien-Chung |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5796337/ https://www.ncbi.nlm.nih.gov/pubmed/29315218 http://dx.doi.org/10.3390/s18010163 |
Ejemplares similares
-
Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
por: Koretomo, Daichi, et al.
Publicado: (2020) -
Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes
por: Hu, Shiben, et al.
Publicado: (2018) -
Annealing Effects on Gas Sensing Response of Ga-Doped
ZnO Thin Films
por: Ramola, R. C., et al.
Publicado: (2021) -
Memristive characteristic of an amorphous Ga-Sn-O thin-film device
por: Sugisaki, Sumio, et al.
Publicado: (2019) -
Mass spectrometric investigation of amorphous Ga-Sb-Se thin films
por: Mawale, Ravi, et al.
Publicado: (2019)