Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response onl...

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Detalles Bibliográficos
Autores principales: Jin, Lin, Wen, Long, Liang, Li, Chen, Qin, Sun, Yunfei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5796959/
https://www.ncbi.nlm.nih.gov/pubmed/29396620
http://dx.doi.org/10.1186/s11671-018-2446-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5796959/
https://www.ncbi.nlm.nih.gov/pubmed/29396620
http://dx.doi.org/10.1186/s11671-018-2446-0

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