Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance

Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Kyung Jae, Lee, Sangyeop, Bac, Seul-Ki, Choi, Seonghoon, Lee, Hakjoon, Chang, Jihoon, Choi, Suho, Chongthanaphisut, Phunvira, Lee, Sanghoon, Liu, X., Dobrowolska, M., Furdyna, J. K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5797254/
https://www.ncbi.nlm.nih.gov/pubmed/29396557
http://dx.doi.org/10.1038/s41598-018-20749-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5797254/
https://www.ncbi.nlm.nih.gov/pubmed/29396557
http://dx.doi.org/10.1038/s41598-018-20749-8

Ejemplares similares