Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

This study investigates the resistive switching characteristics and underlying mechanism in 2D layered hexagonal boron nitride (h-BN) dielectric films using conductive atomic force microscopy. A combination of bipolar and threshold resistive switching is observed consistently on multi-layer h-BN/Cu...

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Detalles Bibliográficos
Autores principales: Ranjan, A., Raghavan, N., O’Shea, S. J., Mei, S., Bosman, M., Shubhakar, K., Pey, K. L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5809508/
https://www.ncbi.nlm.nih.gov/pubmed/29434292
http://dx.doi.org/10.1038/s41598-018-21138-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5809508/
https://www.ncbi.nlm.nih.gov/pubmed/29434292
http://dx.doi.org/10.1038/s41598-018-21138-x

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