Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga...

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Detalles Bibliográficos
Autores principales: Zhong, Aihua, Fan, Ping, Zhong, Yuanting, Zhang, Dongping, Li, Fu, Luo, Jingting, Xie, Yizhu, Hane, Kazuhiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5811422/
https://www.ncbi.nlm.nih.gov/pubmed/29442172
http://dx.doi.org/10.1186/s11671-018-2461-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5811422/
https://www.ncbi.nlm.nih.gov/pubmed/29442172
http://dx.doi.org/10.1186/s11671-018-2461-1

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