New strategies for producing defect free SiGe strained nanolayers

Strain engineering is seen as a cost-effective way to improve the properties of electronic devices. However, this technique is limited by the development of the Asarro Tiller Grinfeld growth instability and nucleation of dislocations. Two strain engineering processes have been developed, fabrication...

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Detalles Bibliográficos
Autores principales: David, Thomas, Aqua, Jean-Noël, Liu, Kailang, Favre, Luc, Ronda, Antoine, Abbarchi, Marco, Claude, Jean-Benoit, Berbezier, Isabelle
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5811444/
https://www.ncbi.nlm.nih.gov/pubmed/29440693
http://dx.doi.org/10.1038/s41598-018-21299-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5811444/
https://www.ncbi.nlm.nih.gov/pubmed/29440693
http://dx.doi.org/10.1038/s41598-018-21299-9

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