Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars wi...

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Detalles Bibliográficos
Autores principales: Wang, Mengxing, Cai, Wenlong, Cao, Kaihua, Zhou, Jiaqi, Wrona, Jerzy, Peng, Shouzhong, Yang, Huaiwen, Wei, Jiaqi, Kang, Wang, Zhang, Youguang, Langer, Jürgen, Ocker, Berthold, Fert, Albert, Zhao, Weisheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5813193/
https://www.ncbi.nlm.nih.gov/pubmed/29445186
http://dx.doi.org/10.1038/s41467-018-03140-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5813193/
https://www.ncbi.nlm.nih.gov/pubmed/29445186
http://dx.doi.org/10.1038/s41467-018-03140-z

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