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Chemically induced Fermi level pinning effects of high-k dielectrics on graphene
High-k materials such as Al(2)O(3) and HfO(2) are widely used as gate dielectrics in graphene devices. However, the effective work function values of metal gate in graphene FET are significantly deviated from their vacuum work function, which is similar to the Fermi level pinning effect observed in...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5813236/ https://www.ncbi.nlm.nih.gov/pubmed/29445202 http://dx.doi.org/10.1038/s41598-018-21055-z |