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Chemically induced Fermi level pinning effects of high-k dielectrics on graphene

High-k materials such as Al(2)O(3) and HfO(2) are widely used as gate dielectrics in graphene devices. However, the effective work function values of metal gate in graphene FET are significantly deviated from their vacuum work function, which is similar to the Fermi level pinning effect observed in...

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Detalles Bibliográficos
Autores principales:	Kim, So-Young, Kim, Yun Ji, Jung, Ukjin, Lee, Byoung Hun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5813236/ https://www.ncbi.nlm.nih.gov/pubmed/29445202 http://dx.doi.org/10.1038/s41598-018-21055-z

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