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Diamond FinFET without Hydrogen Termination

In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with...

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Detalles Bibliográficos
Autores principales: Huang, Biqin, Bai, Xiwei, Lam, Stephen K., Tsang, Kenneth K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5814511/
https://www.ncbi.nlm.nih.gov/pubmed/29449602
http://dx.doi.org/10.1038/s41598-018-20803-5