A soft lithographic approach to fabricate InAs nanowire field-effect transistors

The epitaxial layer transfer process was previously introduced to integrate high-quality and ultrathin III-V compound semiconductor layers on any substrate. However, this technique has limitation for fabrication of sub-micron nanoribbons due to the diffraction limit of photolithography. In order to...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Sang Hwa, Shin, Sung-Ho, Madsen, Morten, Takei, Kuniharu, Nah, Junghyo, Lee, Min Hyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5816620/
https://www.ncbi.nlm.nih.gov/pubmed/29453402
http://dx.doi.org/10.1038/s41598-018-21420-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5816620/
https://www.ncbi.nlm.nih.gov/pubmed/29453402
http://dx.doi.org/10.1038/s41598-018-21420-y

Ejemplares similares