Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of g...

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Detalles Bibliográficos
Autores principales: Su, Xiang-Bin, Ding, Ying, Ma, Ben, Zhang, Ke-Lu, Chen, Ze-Sheng, Li, Jing-Lun, Cui, Xiao-Ran, Xu, Ying-Qiang, Ni, Hai-Qiao, Niu, Zhi-Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821618/
https://www.ncbi.nlm.nih.gov/pubmed/29468483
http://dx.doi.org/10.1186/s11671-018-2472-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821618/
https://www.ncbi.nlm.nih.gov/pubmed/29468483
http://dx.doi.org/10.1186/s11671-018-2472-y

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