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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of g...

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Autores principales: Su, Xiang-Bin, Ding, Ying, Ma, Ben, Zhang, Ke-Lu, Chen, Ze-Sheng, Li, Jing-Lun, Cui, Xiao-Ran, Xu, Ying-Qiang, Ni, Hai-Qiao, Niu, Zhi-Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821618/
https://www.ncbi.nlm.nih.gov/pubmed/29468483
http://dx.doi.org/10.1186/s11671-018-2472-y
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author Su, Xiang-Bin
Ding, Ying
Ma, Ben
Zhang, Ke-Lu
Chen, Ze-Sheng
Li, Jing-Lun
Cui, Xiao-Ran
Xu, Ying-Qiang
Ni, Hai-Qiao
Niu, Zhi-Chuan
author_facet Su, Xiang-Bin
Ding, Ying
Ma, Ben
Zhang, Ke-Lu
Chen, Ze-Sheng
Li, Jing-Lun
Cui, Xiao-Ran
Xu, Ying-Qiang
Ni, Hai-Qiao
Niu, Zhi-Chuan
author_sort Su, Xiang-Bin
collection PubMed
description The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm(2) was demonstrated.
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spelling pubmed-58216182018-02-27 Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers Su, Xiang-Bin Ding, Ying Ma, Ben Zhang, Ke-Lu Chen, Ze-Sheng Li, Jing-Lun Cui, Xiao-Ran Xu, Ying-Qiang Ni, Hai-Qiao Niu, Zhi-Chuan Nanoscale Res Lett Nano Idea The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm(2) was demonstrated. Springer US 2018-02-21 /pmc/articles/PMC5821618/ /pubmed/29468483 http://dx.doi.org/10.1186/s11671-018-2472-y Text en © The Author(s). 2018 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Idea
Su, Xiang-Bin
Ding, Ying
Ma, Ben
Zhang, Ke-Lu
Chen, Ze-Sheng
Li, Jing-Lun
Cui, Xiao-Ran
Xu, Ying-Qiang
Ni, Hai-Qiao
Niu, Zhi-Chuan
Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
title Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
title_full Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
title_fullStr Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
title_full_unstemmed Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
title_short Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
title_sort elimination of bimodal size in inas/gaas quantum dots for preparation of 1.3-μm quantum dot lasers
topic Nano Idea
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821618/
https://www.ncbi.nlm.nih.gov/pubmed/29468483
http://dx.doi.org/10.1186/s11671-018-2472-y
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