Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films

Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabr...

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Detalles Bibliográficos
Autores principales: Afzal, Amir Muhammad, Khan, Muhammad Farooq, Nazir, Ghazanfar, Dastgeer, Ghulam, Aftab, Sikandar, Akhtar, Imtisal, Seo, Yongho, Eom, Jonghwa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821884/
https://www.ncbi.nlm.nih.gov/pubmed/29467459
http://dx.doi.org/10.1038/s41598-018-21787-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821884/
https://www.ncbi.nlm.nih.gov/pubmed/29467459
http://dx.doi.org/10.1038/s41598-018-21787-y

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