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Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films

Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabr...

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Autores principales: Afzal, Amir Muhammad, Khan, Muhammad Farooq, Nazir, Ghazanfar, Dastgeer, Ghulam, Aftab, Sikandar, Akhtar, Imtisal, Seo, Yongho, Eom, Jonghwa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821884/
https://www.ncbi.nlm.nih.gov/pubmed/29467459
http://dx.doi.org/10.1038/s41598-018-21787-y
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author Afzal, Amir Muhammad
Khan, Muhammad Farooq
Nazir, Ghazanfar
Dastgeer, Ghulam
Aftab, Sikandar
Akhtar, Imtisal
Seo, Yongho
Eom, Jonghwa
author_facet Afzal, Amir Muhammad
Khan, Muhammad Farooq
Nazir, Ghazanfar
Dastgeer, Ghulam
Aftab, Sikandar
Akhtar, Imtisal
Seo, Yongho
Eom, Jonghwa
author_sort Afzal, Amir Muhammad
collection PubMed
description Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabricated bilayer graphene encapsulated by WS(2) layers to exploit the interface-induced spin-orbit interaction (SOI). We designed a dual gated device, where the SOI is tuned by gate voltages. The strength of induced SOI in the bilayer graphene is dramatically elevated, which leads to a strong weak antilocalization (WAL) effect at low temperature. The quantitative analysis of WAL demonstrates that the spin relaxation time is 10 times smaller than in bilayer graphene on conventional substrates. To support these results, we also examined Shubnikov-de Haas (SdH) oscillations, which give unambiguous evidence of the zero-field spin-splitting in our bilayer graphene. The spin-orbit coupling constants estimated by two different measurements (i.e., the WAL effect and SdH oscillations) show close values as a function of gate voltage, supporting the self-consistency of this study’s experimental results. The gate modulation of the SOI in bilayer graphene encapsulated by WS(2) films establishes a novel way to explore the manipulation of spin-dependent transport through an electric field.
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spelling pubmed-58218842018-02-26 Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films Afzal, Amir Muhammad Khan, Muhammad Farooq Nazir, Ghazanfar Dastgeer, Ghulam Aftab, Sikandar Akhtar, Imtisal Seo, Yongho Eom, Jonghwa Sci Rep Article Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabricated bilayer graphene encapsulated by WS(2) layers to exploit the interface-induced spin-orbit interaction (SOI). We designed a dual gated device, where the SOI is tuned by gate voltages. The strength of induced SOI in the bilayer graphene is dramatically elevated, which leads to a strong weak antilocalization (WAL) effect at low temperature. The quantitative analysis of WAL demonstrates that the spin relaxation time is 10 times smaller than in bilayer graphene on conventional substrates. To support these results, we also examined Shubnikov-de Haas (SdH) oscillations, which give unambiguous evidence of the zero-field spin-splitting in our bilayer graphene. The spin-orbit coupling constants estimated by two different measurements (i.e., the WAL effect and SdH oscillations) show close values as a function of gate voltage, supporting the self-consistency of this study’s experimental results. The gate modulation of the SOI in bilayer graphene encapsulated by WS(2) films establishes a novel way to explore the manipulation of spin-dependent transport through an electric field. Nature Publishing Group UK 2018-02-21 /pmc/articles/PMC5821884/ /pubmed/29467459 http://dx.doi.org/10.1038/s41598-018-21787-y Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Afzal, Amir Muhammad
Khan, Muhammad Farooq
Nazir, Ghazanfar
Dastgeer, Ghulam
Aftab, Sikandar
Akhtar, Imtisal
Seo, Yongho
Eom, Jonghwa
Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films
title Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films
title_full Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films
title_fullStr Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films
title_full_unstemmed Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films
title_short Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS(2) films
title_sort gate modulation of the spin-orbit interaction in bilayer graphene encapsulated by ws(2) films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821884/
https://www.ncbi.nlm.nih.gov/pubmed/29467459
http://dx.doi.org/10.1038/s41598-018-21787-y
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