Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes

The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light‐emitting diodes (LE...

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Detalles Bibliográficos
Autores principales: Son, Kwang Jeong, Kim, Tae Kyoung, Cha, Yu‐Jung, Oh, Seung Kyu, You, Shin‐Jae, Ryou, Jae‐Hyun, Kwak, Joon Seop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2017
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5827458/
https://www.ncbi.nlm.nih.gov/pubmed/29619312
http://dx.doi.org/10.1002/advs.201700637

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5827458/
https://www.ncbi.nlm.nih.gov/pubmed/29619312
http://dx.doi.org/10.1002/advs.201700637

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