Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

[Image: see text] Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on no...

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Detalles Bibliográficos
Autores principales: Singh, Joseph A., Thissen, Nick F. W., Kim, Woo-Hee, Johnson, Hannah, Kessels, Wilhelmus M. M., Bol, Ageeth A., Bent, Stacey F., Mackus, Adriaan J. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5828705/
https://www.ncbi.nlm.nih.gov/pubmed/29503508
http://dx.doi.org/10.1021/acs.chemmater.7b03818

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5828705/
https://www.ncbi.nlm.nih.gov/pubmed/29503508
http://dx.doi.org/10.1021/acs.chemmater.7b03818

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