Damage to epitaxial GaN layer on Al(2)O(3) by 290-MeV (238)U(32+) ions irradiation

Micro-structural characteristics and electrical properties of an n-type GaN epilayer on Al(2)O(3) irradiated by 290-MeV (238)U(32+) ions to various fluences were investigated using atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HRXRD), and Raman...

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Detalles Bibliográficos
Autores principales: Zhang, L. Q., Zhang, C. H., Li, J. J., Meng, Y. C., Yang, Y. T., Song, Y., Ding, Z. N., Yan, T. X.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5841313/
https://www.ncbi.nlm.nih.gov/pubmed/29515199
http://dx.doi.org/10.1038/s41598-018-22321-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5841313/
https://www.ncbi.nlm.nih.gov/pubmed/29515199
http://dx.doi.org/10.1038/s41598-018-22321-w

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