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Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN
On an SiO(2)-patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5841315/ https://www.ncbi.nlm.nih.gov/pubmed/29515140 http://dx.doi.org/10.1038/s41598-018-22424-4 |