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Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN
On an SiO(2)-patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5841315/ https://www.ncbi.nlm.nih.gov/pubmed/29515140 http://dx.doi.org/10.1038/s41598-018-22424-4 |
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author | Jang, Dongsoo Jue, Miyeon Kim, Donghoi Kim, Hwa Seob Lee, Hyunkyu Kim, Chinkyo |
author_facet | Jang, Dongsoo Jue, Miyeon Kim, Donghoi Kim, Hwa Seob Lee, Hyunkyu Kim, Chinkyo |
author_sort | Jang, Dongsoo |
collection | PubMed |
description | On an SiO(2)-patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H(3)PO(4), this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO(2)-patterned sapphire. |
format | Online Article Text |
id | pubmed-5841315 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-58413152018-03-13 Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN Jang, Dongsoo Jue, Miyeon Kim, Donghoi Kim, Hwa Seob Lee, Hyunkyu Kim, Chinkyo Sci Rep Article On an SiO(2)-patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H(3)PO(4), this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO(2)-patterned sapphire. Nature Publishing Group UK 2018-03-07 /pmc/articles/PMC5841315/ /pubmed/29515140 http://dx.doi.org/10.1038/s41598-018-22424-4 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Jang, Dongsoo Jue, Miyeon Kim, Donghoi Kim, Hwa Seob Lee, Hyunkyu Kim, Chinkyo Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN |
title | Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN |
title_full | Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN |
title_fullStr | Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN |
title_full_unstemmed | Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN |
title_short | Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN |
title_sort | polarity-inverted lateral overgrowth and selective wet-etching and regrowth (piloswer) of gan |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5841315/ https://www.ncbi.nlm.nih.gov/pubmed/29515140 http://dx.doi.org/10.1038/s41598-018-22424-4 |
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