Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO(x) interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms...

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Detalles Bibliográficos
Autores principales: Liu, Xianzhe, Xu, Hua, Ning, Honglong, Lu, Kuankuan, Zhang, Hongke, Zhang, Xiaochen, Yao, Rihui, Fang, Zhiqiang, Lu, Xubing, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5841428/
https://www.ncbi.nlm.nih.gov/pubmed/29515163
http://dx.doi.org/10.1038/s41598-018-22602-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5841428/
https://www.ncbi.nlm.nih.gov/pubmed/29515163
http://dx.doi.org/10.1038/s41598-018-22602-4

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