Investigation of Surface Morphology of 6H-SiC Irradiated with He(+) and H(2)(+) Ions

Light ion implantation is one of the important procedures of smart cut for SiC-based semiconductor fabrication. This work investigated the surface morphologies and microstructures of single crystal 6H-SiC irradiated by one or both of H(2)(+) and He(+) ions at room temperature and then annealed at sp...

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Detalles Bibliográficos
Autores principales: Shen, Qiang, Ran, Guang, Zhou, Wei, Ye, Chao, Feng, Qijie, Li, Ning
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5848979/
https://www.ncbi.nlm.nih.gov/pubmed/29439460
http://dx.doi.org/10.3390/ma11020282

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5848979/
https://www.ncbi.nlm.nih.gov/pubmed/29439460
http://dx.doi.org/10.3390/ma11020282

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