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Investigation of Surface Morphology of 6H-SiC Irradiated with He(+) and H(2)(+) Ions
Light ion implantation is one of the important procedures of smart cut for SiC-based semiconductor fabrication. This work investigated the surface morphologies and microstructures of single crystal 6H-SiC irradiated by one or both of H(2)(+) and He(+) ions at room temperature and then annealed at sp...
Autores principales: | Shen, Qiang, Ran, Guang, Zhou, Wei, Ye, Chao, Feng, Qijie, Li, Ning |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5848979/ https://www.ncbi.nlm.nih.gov/pubmed/29439460 http://dx.doi.org/10.3390/ma11020282 |
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