Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm(...

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Detalles Bibliográficos
Autores principales: Sun, Fu-Long, Liu, Zhi-Quan, Li, Cai-Fu, Zhu, Qing-Sheng, Zhang, Hao, Suganuma, Katsuaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Letter
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5849016/
https://www.ncbi.nlm.nih.gov/pubmed/29473865
http://dx.doi.org/10.3390/ma11020319

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5849016/
https://www.ncbi.nlm.nih.gov/pubmed/29473865
http://dx.doi.org/10.3390/ma11020319

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