Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon...

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Detalles Bibliográficos
Autores principales: Ma, Zhe, Liu, Yang, Deng, Lingxiao, Zhang, Mingliang, Zhang, Shuyuan, Ma, Jing, Song, Peishuai, Liu, Qing, Ji, An, Yang, Fuhua, Wang, Xiaodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5853709/
https://www.ncbi.nlm.nih.gov/pubmed/29385759
http://dx.doi.org/10.3390/nano8020077

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5853709/
https://www.ncbi.nlm.nih.gov/pubmed/29385759
http://dx.doi.org/10.3390/nano8020077

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