Direct Auger recombination and density-dependent hole diffusion in InN

Indium nitride has a good potential for infrared optoelectronics, yet it suffers from fast nonradiative recombination, the true origin of which has not been established with certainty. The diffusion length of free carriers at high densities is not well investigated either. Here, we study carrier rec...

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Detalles Bibliográficos
Autores principales: Aleksiejūnas, Ramūnas, Podlipskas, Žydrūnas, Nargelas, Saulius, Kadys, Arūnas, Kolenda, Marek, Nomeika, Kazimieras, Mickevičius, Jūras, Tamulaitis, Gintautas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5854707/
https://www.ncbi.nlm.nih.gov/pubmed/29545555
http://dx.doi.org/10.1038/s41598-018-22832-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5854707/
https://www.ncbi.nlm.nih.gov/pubmed/29545555
http://dx.doi.org/10.1038/s41598-018-22832-6

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