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Direct Auger recombination and density-dependent hole diffusion in InN
Indium nitride has a good potential for infrared optoelectronics, yet it suffers from fast nonradiative recombination, the true origin of which has not been established with certainty. The diffusion length of free carriers at high densities is not well investigated either. Here, we study carrier rec...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5854707/ https://www.ncbi.nlm.nih.gov/pubmed/29545555 http://dx.doi.org/10.1038/s41598-018-22832-6 |