Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel †

We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based...

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Detalles Bibliográficos
Autores principales: Yokoyama, Toshifumi, Tsutsui, Masafumi, Suzuki, Masakatsu, Nishi, Yoshiaki, Mizuno, Ikuo, Lahav, Assaf
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5855103/
https://www.ncbi.nlm.nih.gov/pubmed/29370146
http://dx.doi.org/10.3390/s18020349

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5855103/
https://www.ncbi.nlm.nih.gov/pubmed/29370146
http://dx.doi.org/10.3390/s18020349

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