Cargando…
Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel †
We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5855103/ https://www.ncbi.nlm.nih.gov/pubmed/29370146 http://dx.doi.org/10.3390/s18020349 |
_version_ | 1783307031916052480 |
---|---|
author | Yokoyama, Toshifumi Tsutsui, Masafumi Suzuki, Masakatsu Nishi, Yoshiaki Mizuno, Ikuo Lahav, Assaf |
author_facet | Yokoyama, Toshifumi Tsutsui, Masafumi Suzuki, Masakatsu Nishi, Yoshiaki Mizuno, Ikuo Lahav, Assaf |
author_sort | Yokoyama, Toshifumi |
collection | PubMed |
description | We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e(−)/s at 60 °C. |
format | Online Article Text |
id | pubmed-5855103 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-58551032018-03-20 Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel † Yokoyama, Toshifumi Tsutsui, Masafumi Suzuki, Masakatsu Nishi, Yoshiaki Mizuno, Ikuo Lahav, Assaf Sensors (Basel) Article We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e(−)/s at 60 °C. MDPI 2018-01-25 /pmc/articles/PMC5855103/ /pubmed/29370146 http://dx.doi.org/10.3390/s18020349 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yokoyama, Toshifumi Tsutsui, Masafumi Suzuki, Masakatsu Nishi, Yoshiaki Mizuno, Ikuo Lahav, Assaf Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel † |
title | Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel † |
title_full | Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel † |
title_fullStr | Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel † |
title_full_unstemmed | Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel † |
title_short | Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel † |
title_sort | development of low parasitic light sensitivity and low dark current 2.8 μm global shutter pixel † |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5855103/ https://www.ncbi.nlm.nih.gov/pubmed/29370146 http://dx.doi.org/10.3390/s18020349 |
work_keys_str_mv | AT yokoyamatoshifumi developmentoflowparasiticlightsensitivityandlowdarkcurrent28mmglobalshutterpixel AT tsutsuimasafumi developmentoflowparasiticlightsensitivityandlowdarkcurrent28mmglobalshutterpixel AT suzukimasakatsu developmentoflowparasiticlightsensitivityandlowdarkcurrent28mmglobalshutterpixel AT nishiyoshiaki developmentoflowparasiticlightsensitivityandlowdarkcurrent28mmglobalshutterpixel AT mizunoikuo developmentoflowparasiticlightsensitivityandlowdarkcurrent28mmglobalshutterpixel AT lahavassaf developmentoflowparasiticlightsensitivityandlowdarkcurrent28mmglobalshutterpixel |