A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology †

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum effic...

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Detalles Bibliográficos
Autores principales: Padmanabhan, Preethi, Hancock, Bruce, Nikzad, Shouleh, Bell, L. Douglas, Kroep, Kees, Charbon, Edoardo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5855384/
https://www.ncbi.nlm.nih.gov/pubmed/29401655
http://dx.doi.org/10.3390/s18020449

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5855384/
https://www.ncbi.nlm.nih.gov/pubmed/29401655
http://dx.doi.org/10.3390/s18020449

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