Photoresponse of graphene field-effect-transistor with n-type Si depletion layer gate

Graphene/semiconductor Schottky junctions are an emerging field for high-performance optoelectronic devices. This study investigates not only the steady state but also the transient photoresponse of graphene field-effect transistor (G-FET) of which gate bias is applied through the Schottky barrier f...

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Detalles Bibliográficos
Autores principales: Kobayashi, Shiho, Anno, Yuki, Takei, Kuniharu, Arie, Takayuki, Akita, Seiji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5859296/
https://www.ncbi.nlm.nih.gov/pubmed/29556066
http://dx.doi.org/10.1038/s41598-018-22974-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5859296/
https://www.ncbi.nlm.nih.gov/pubmed/29556066
http://dx.doi.org/10.1038/s41598-018-22974-7

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