Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He be...

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Detalles Bibliográficos
Autores principales: Su, Qing, Ding, Hepeng, Price, Lloyd, Shao, Lin, Hinks, Jonathan A., Greaves, Graeme, Donnelly, Stephen E., Demkowicz, Michael J., Nastasi, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5864747/
https://www.ncbi.nlm.nih.gov/pubmed/29568069
http://dx.doi.org/10.1038/s41598-018-23426-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5864747/
https://www.ncbi.nlm.nih.gov/pubmed/29568069
http://dx.doi.org/10.1038/s41598-018-23426-y

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