Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He be...

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Autores principales: Su, Qing, Ding, Hepeng, Price, Lloyd, Shao, Lin, Hinks, Jonathan A., Greaves, Graeme, Donnelly, Stephen E., Demkowicz, Michael J., Nastasi, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5864747/
https://www.ncbi.nlm.nih.gov/pubmed/29568069
http://dx.doi.org/10.1038/s41598-018-23426-y
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author Su, Qing
Ding, Hepeng
Price, Lloyd
Shao, Lin
Hinks, Jonathan A.
Greaves, Graeme
Donnelly, Stephen E.
Demkowicz, Michael J.
Nastasi, Michael
author_facet Su, Qing
Ding, Hepeng
Price, Lloyd
Shao, Lin
Hinks, Jonathan A.
Greaves, Graeme
Donnelly, Stephen E.
Demkowicz, Michael J.
Nastasi, Michael
author_sort Su, Qing
collection PubMed
description Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. Furthermore, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.
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spelling pubmed-58647472018-03-27 Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide Su, Qing Ding, Hepeng Price, Lloyd Shao, Lin Hinks, Jonathan A. Greaves, Graeme Donnelly, Stephen E. Demkowicz, Michael J. Nastasi, Michael Sci Rep Article Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. Furthermore, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He. Nature Publishing Group UK 2018-03-22 /pmc/articles/PMC5864747/ /pubmed/29568069 http://dx.doi.org/10.1038/s41598-018-23426-y Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Su, Qing
Ding, Hepeng
Price, Lloyd
Shao, Lin
Hinks, Jonathan A.
Greaves, Graeme
Donnelly, Stephen E.
Demkowicz, Michael J.
Nastasi, Michael
Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
title Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
title_full Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
title_fullStr Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
title_full_unstemmed Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
title_short Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
title_sort rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5864747/
https://www.ncbi.nlm.nih.gov/pubmed/29568069
http://dx.doi.org/10.1038/s41598-018-23426-y
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