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Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He be...
Autores principales: | Su, Qing, Ding, Hepeng, Price, Lloyd, Shao, Lin, Hinks, Jonathan A., Greaves, Graeme, Donnelly, Stephen E., Demkowicz, Michael J., Nastasi, Michael |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5864747/ https://www.ncbi.nlm.nih.gov/pubmed/29568069 http://dx.doi.org/10.1038/s41598-018-23426-y |
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