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Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning
Recent advances in two-dimensional dopant profiling in the scanning electron microscope have enabled a high throughput, non-contact process diagnostics and failure analysis solution for integrated device manufacturing. The routine (electro)chemical etch processes to obtain contamination-free, hydrog...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5869679/ https://www.ncbi.nlm.nih.gov/pubmed/29588446 http://dx.doi.org/10.1038/s41598-018-22909-2 |