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Effect of annealing treatments on CeO(2) grown on TiN and Si substrates by atomic layer deposition

In this work, we investigate the effect of thermal treatment on CeO(2) films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphological properties of 25 nm thick ceria oxide with pa...

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Detalles Bibliográficos
Autores principales: Vangelista, Silvia, Piagge, Rossella, Ek, Satu, Lamperti, Alessio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5870165/
https://www.ncbi.nlm.nih.gov/pubmed/29600150
http://dx.doi.org/10.3762/bjnano.9.83

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