Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors

Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current–voltage (I–V) characterization. The static I–V dependencies demonstrate the high quality of fabricated...

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Detalles Bibliográficos
Autores principales: Gasparyan, Ferdinand, Zadorozhnyi, Ihor, Khondkaryan, Hrant, Arakelyan, Armen, Vitusevich, Svetlana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5871613/
https://www.ncbi.nlm.nih.gov/pubmed/29589128
http://dx.doi.org/10.1186/s11671-018-2494-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5871613/
https://www.ncbi.nlm.nih.gov/pubmed/29589128
http://dx.doi.org/10.1186/s11671-018-2494-5

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