Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very h...

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Detalles Bibliográficos
Autores principales: Megalini, Ludovico, Šuran Brunelli, Simone Tommaso, Charles, William O., Taylor, Aidan, Isaac, Brandon, Bowers, John E., Klamkin, Jonathan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5872916/
https://www.ncbi.nlm.nih.gov/pubmed/29495381
http://dx.doi.org/10.3390/ma11030337

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5872916/
https://www.ncbi.nlm.nih.gov/pubmed/29495381
http://dx.doi.org/10.3390/ma11030337

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