Effect of Growth Temperature on the Structural and Electrical Properties of ZrO(2) Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH(3))(2)](3)/C(7)H(8) Cocktail Precursor

The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO(2)) dielectric thin films that were fabricated using a CpZr[N(CH(3))(2)](3)/C(7)H(8) cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO(2) films grown at te...

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Detalles Bibliográficos
Autores principales: An, Jong-Ki, Chung, Nak-Kwan, Kim, Jin-Tae, Hahm, Sung-Ho, Lee, Geunsu, Lee, Sung Bo, Lee, Taehoon, Park, In-Sung, Yun, Ju-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5872965/
https://www.ncbi.nlm.nih.gov/pubmed/29510594
http://dx.doi.org/10.3390/ma11030386

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5872965/
https://www.ncbi.nlm.nih.gov/pubmed/29510594
http://dx.doi.org/10.3390/ma11030386

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