Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-perform...

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Detalles Bibliográficos
Autores principales: Peng, Bin, Zheng, Wei, Qin, Jiantao, Zhang, Wanli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5873009/
https://www.ncbi.nlm.nih.gov/pubmed/29543770
http://dx.doi.org/10.3390/ma11030430

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5873009/
https://www.ncbi.nlm.nih.gov/pubmed/29543770
http://dx.doi.org/10.3390/ma11030430

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