Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation self-constantly with the Poisson equation. We find that out of the 14 compounds, MoS(2), MoSe(2), and MoTe(2) may be used in the devices to achieve a good subthreshold swing and a reasonable current ON-OFF ratio and delay. Our work points out the direction of further device optimization for experiments.